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سالهفتهIDTitleApplNoIPCApplicantSubgroupزیر گروهرشته شرحDescription
202552WO/2025/179756POWER MODULE AND MANUFACTURING METHOD THEREFORCN2024/106118H01L 21/60ZINSIGHT TECHNOLOGY (SHANGHAI) CO. LTDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/260141METHOD OF PRODUCING A PATTERNED MATERIAL ON A FILMAU2025/050663H01L 21/44NEWSOUTH INNOVATIONS PTY LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/260142A METHOD OF PATTERNING MATERIALSAU2025/050664H01L 21/033NEWSOUTH INNOVATIONS PTY LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/260208SEMICONDUCTOR PACKAGING APPARATUSCN2024/099557H01L 21/67WANG, ChungpaoELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/260497SUBSTRATE CARRYING APPARATUS AND FILM ATTACHING DEVICECN2024/113826H01L 21/683WAFTECH SDN. BHD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/260501METHOD FOR IMPROVING ADHESION OF SEED LAYERCN2024/114256H01L 21/48ARRAYED MATERIALS (CHINA) CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/260565INTERPOSER AND METHOD FOR TESTING SAME, AND SEMICONDUCTOR STRUCTURECN2024/125781H01L 23/538TSINGHUA UNIVERSITYELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/260812ELECTRICAL CONNECTION SUBSTRATE, CHIP PACKAGING STRUCTURE, AND ELECTRONIC DEVICECN2025/078840H01L 23/498HUAWEI TECHNOLOGIES CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/260820CHIP PACKAGING STRUCTURE AND ELECTRONIC DEVICECN2025/079668H01L 23/473HUAWEI TECHNOLOGIES CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/260853OPTICAL-COMMUNICATION MODULE PACKAGING STRUCTURE AND PREPARATION METHODCN2025/082134H01L 25/16HUAWEI TECHNOLOGIES CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/260967CHUCK FOR SQUARE SUBSTRATECN2025/091149H01L 21/687ACM RESEARCH (SHANGHAI) , INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261001CHUCK FOR SQUARE SUBSTRATECN2025/093930H01L 21/687ACM RESEARCH (SHANGHAI) , INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261004WAFER PROCESSING APPARATUSCN2025/093980H01L 21/67ACM RESEARCH (SHANGHAI) , INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261022EDGE CLEANING DEVICE AND EDGE CLEANING METHODCN2025/094838H01L 21/67ACM RESEARCH (SHANGHAI) , INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261124WAFER BAKING DEVICECN2025/098032H01L 21/67CHIPMORE TECHNOLOGY CORPORATION LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261304OPTICAL DEVICE, OPTICAL DEVICE PROCESSING METHOD, AND ELECTRONIC DEVICECN2025/101223H01L 25/16VIVO MOBILE COMMUNICATION CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261627SEMICONDUCTOR STRUCTURESEP2025/059016H01L 21/02IQE PLCELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261641SEMICONDUCTOR STRUCTURESEP2025/061261H01L 21/20IQE PLCELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261690WAFER-TO-WAFER BONDING PROCESSEP2025/063754H01L 21/18ASML NETHERLANDS B.V.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261694METHOD AND APPARATUS FOR BONDING SUBSTRATESEP2025/063931H01L 21/67ASML NETHERLANDS B.V.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261726METHOD FOR PRODUCING A COMPOSITE STRUCTURE INCLUDING A STACK OF LAYERS MADE OF SINGLE-CRYSTAL III-V MATERIALSEP2025/064495H01L 21/20SOITECELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261752UTILIZING FORMATE SHELLS FOR METAL STRUCTURES ON INTEGRATED CIRCUIT COMPONENTSEP2025/065024H01L 23/00INTERNATIONAL BUSINESS MACHINES CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/2617863D INSPECTION OF BURIED REGIONS OF INTEREST WITH REDUCED MILLING ARTEFACTSEP2025/065517H01L 21/66CARL ZEISS SMT GMBHELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261891LED LIGHTING DEVICE WITH PHOSPHOR LAYER MIXTUREEP2025/066423H01L 25/075SIGNIFY HOLDING B.V.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/261911VIA-CONNECTED TOP SUBSTRATE OF A POWER MODULEEP2025/066526H01L 23/373ROBERT BOSCH GMBHELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/262084FAN-OUT PANEL-LEVEL PACKAGING WITH DIRECT BONDED COPPEREP2025/066982H01L 23/00CAMBRIDGE GAN DEVICES LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/262743HETERO-JUNCTION BIPOLAR TRANSISTORJP2024/021860H01L 29/737NTT, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/262744NITRIDE SEMICONDUCTOR ELEMENTJP2024/021861H01L 29/778NTT, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/262765MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICEJP2024/021945H01L 23/12ASTEMO, LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/262815OPTICAL MODULE AND METHOD FOR MANUFACTURING SAMEJP2024/022102H01L 31/02MITSUBISHI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/262834LASER DICING DEVICEJP2024/022223H01L 21/301YAMAHA HATSUDOKI KABUSHIKI KAISHAELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/262897HEAT-CONDUCTING SHEET, HEAT-DISSIPATING DEVICE, AND HEAT-CONDUCTING SHEET PRODUCTION METHODJP2024/022459H01L 23/36RESONAC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/262912SEMICONDUCTOR DEVICEJP2024/022519H01L 23/04MITSUBISHI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/262939SEMICONDUCTOR DEVICEJP2024/022635H01L 29/812MITSUBISHI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/262958HETERO-JUNCTION BIPOLAR TRANSISTORJP2024/029295H01L 29/737NTT, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263004SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUSJP2025/004398H01L 21/3065TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263064SEMICONDUCTOR DEVICEJP2025/013304H01L 25/07HITACHI ASTEMO, LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263068MANUFACTURING METHOD FOR THREE-DIMENSIONAL MOLDED ARTICLEJP2025/013439H01L 21/60FUJIKURA LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263110ELECTRONIC CIRCUIT AND MANUFACTURING METHOD OF ELECTRONIC CIRCUITJP2025/015611H01L 23/36ALPS ALPINE CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263112ETCHING METHOD AND ETCHING APPARATUSJP2025/015728H01L 21/302SCREEN HOLDINGS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263143ABNORMALITY DETECTION METHOD AND ABNORMALITY DETECTION SYSTEMJP2025/016890H01L 21/02SCREEN HOLDINGS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263213DEVICE WITH EMBEDDED ELECTRONIC COMPONENTS AND PRODUCTION METHOD THEREFORJP2025/018275H01L 25/00MURATA MANUFACTURING CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263227WORK ASSISTANCE METHOD AND WORK ASSISTANCE SYSTEMJP2025/018709H01L 21/02SCREEN HOLDINGS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263250SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICEJP2025/019208H01L 25/07DENSO CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263258ETCHING SOLUTION COMPOSITIONJP2025/019349H01L 21/308RASA INDUSTRIES, LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263317ELECTROSTATIC CHUCKJP2025/020232H01L 21/683TOTO LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263320SEMICONDUCTOR DEVICEJP2025/020253H01L 25/00JAPAN DISPLAY INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263324TEMPERATURE REGULATING DEVICE AND PLASMA PROCESSING DEVICEJP2025/020333H01L 21/3065TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263329CHEMICAL LIQUID SUPPLY DEVICE, CLEANING SYSTEM, AND CONTROL VALVE ADJUSTMENT METHODJP2025/020341H01L 21/304EBARA CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263340SUBSTRATE SUPPORT AND SUBSTRATE TREATMENT DEVICEJP2025/020415H01L 21/683TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263345METHOD FOR DETERMINING OPTIMUM THICKNESS MEASUREMENT POSITION, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUSJP2025/020525H01L 21/304TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263366SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, AND PARAMETER CORRECTION METHODJP2025/020734H01L 21/306TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263371WORK ASSISTANCE METHOD AND WORK ASSISTANCE SYSTEMJP2025/020779H01L 21/02SCREEN HOLDINGS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263387SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULEJP2025/020893H01L 25/04ROHM CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263408SEMICONDUCTOR MODULE AND COMMUNICATION DEVICEJP2025/021066H01L 25/07ROHM CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263413POLISHING COMPOSITIONJP2025/021120H01L 21/304FUJIMI INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263414POLISHING COMPOSITIONJP2025/021121H01L 21/304FUJIMI INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263430FILM FOR TEMPORARY FIXATION, LAMINATE FOR TEMPORARY FIXATION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICEJP2025/021294H01L 21/304RESONAC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263431JOINING DEVICEJP2025/021298H01L 21/02TAZMO CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263452CHIP STACK DEVICE, SEMICONDUCTOR MODULE, AND MANUFACTURING METHOD THEREFORJP2025/021497H01L 25/07YAMAHA ROBOTICS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263462SEMICONDUCTOR DEVICE MANUFACTURING METHODJP2025/021590H01L 21/60YAMAHA ROBOTICS HOLDINGS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263473SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHODJP2025/021647H01L 21/304SCREEN HOLDINGS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263551DIE BONDING FILM AND METHOD FOR MANUFACTURING SAME, DICING/DIE BONDING INTEGRATED FILM AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAMEJP2025/021975H01L 21/52RESONAC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263587GAN SUBSTRATE AND SURFACE PROCESSING METHOD OF GAN SUBSTRATEJP2025/022205H01L 21/304SANOH INDUSTRIAL CO.,LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263663DISPLAY DEVICE USING MICRO LED AND METHOD FOR MANUFACTURING SAMEKR2024/008763H01L 25/075UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITYELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263688HUMIDITY CONTROL EQUIPMENT USING SINGLE FAN FOR PERFORMING DEHUMIDIFICATION AND REGENERATIONKR2024/014985H01L 21/67YEST CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263782ASSEMBLY FOR CONNECTING PARTSKR2025/005181H01L 21/687WILL BE S&T CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263795DISPLAY MODULE AND ELECTRONIC DEVICEKR2025/005488H01L 25/075SAMSUNG ELECTRONICS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/263976DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAMEKR2025/008395H01L 25/075SAMSUNG DISPLAY CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264039DISPLAY DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICEKR2025/008601H01L 25/075SAMSUNG DISPLAY CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264258SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAMEUS2024/056514H01L 23/482MICROCHIP TECHNOLOGY INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264294METHOD FOR SELECTIVELY DEPOSITING ETCH STOP LAYERUS2025/022783H01L 21/768TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264318DUAL-LINER THROUGH-SILICON VIA (TSV) FOR POWER AND SIGNAL TRANSMISSIONUS2025/027619H01L 21/768QUALCOMM INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264357LOW FRACTURE ENERGY ACOUSTIC LIFT-OFFUS2025/030501H01L 21/02CRYSTAL SONIC, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264364METHODS AND APPARATUS FOR DETERMINING A PROPERTY OF A SUBSTRATE SURFACEUS2025/030657H01L 21/66APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264377HETEROGENOUS INTEGRATION OF SEMICONDUCTOR STRUCTURESUS2025/031791H01L 23/528MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264387ETCHING OF A BOTTLE-SHAPED FEATUREUS2025/032239H01L 21/3213LAM RESEARCH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264393COOLANT FLOW CONTROL SYSTEM FOR SUBSTRATE SUPPORTSUS2025/032407H01L 21/67LAM RESEARCH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264400DEVICE COMPRISING WALL PILLAR INTERCONNECTSUS2025/032532H01L 23/00QUALCOMM INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264427SECURITY RING FOR INTEGRATED CIRCUITSUS2025/032953H01L 23/00XILINX, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264438SELECTIVE ETCH OF STACK USING A HYDROGEN CHLORIDE GAS AND FLUORINE CONTAINING GASUS2025/033056H01L 21/311LAM RESEARCH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264447CHEMICAL MECHANICAL POLISHER CLEANING UNITUS2025/033148H01L 21/687APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264494PACKAGE COMPRISING DUMMY SILICON STRUCTURE LOCATED BETWEEN INTEGRATED DEVICESUS2025/033541H01L 23/16QUALCOMM INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264542ROTATIONAL INDEXERS WITH WAFER CENTERING CAPABILITYUS2025/033752H01L 21/68LAM RESEARCH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264543SUBSTRATE SUPPORTUS2025/033755H01L 21/683APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264557SINGLE COMPONENT GAS DIFFUSION COMPONENT WITH VARIATION OF GAS DIFFUSION CHARACTERISTICSUS2025/033777H01L 21/67POREX CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264567LOW-K FILM COEFFICIENT OF THERMAL EXPANSION MODULATION BY UV TREATMENTUS2025/033794H01L 21/02APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264571HYBRID VACUUM ELECTROSTATIC CHUCKUS2025/033800H01L 21/683APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264576DIELECTRIC BOND LAYER FOR JOINING OF DISSIMILAR CERAMIC SEGMENTS OF A SUBSTRATE SUPPORTUS2025/033809H01L 21/687APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264589INTERPOSER FOR SEMICONDUCTOR DEVICESUS2025/033846H01L 23/00ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264619FLUORINE PLASMA RESISTANT DIELECTRIC COMPOSITIONSUS2025/033898H01L 21/687APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264708BRANCHED HYBRID FLEX STRUCTURESUS2025/034026H01L 23/00ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264714COMPOSITE HYBRID STRUCTURESUS2025/034033H01L 25/16ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264792REACTION CHAMBER WITH MULTI PHASE PRECURSOR DELIVERYUS2025/034149H01L 21/67APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264794RESIDUE REMOVAL AFTER ETCH PROCESSES USING A BORON-CONTAINING ETCHANTUS2025/034151H01L 21/3213APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264821METHODS OF REPAIRING LOW-K MATERIALS AFTER INTEGRATION OPERATIONSUS2025/034198H01L 21/02APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264911SEMICONDUCTOR DEVICE HEAT SPREADER AND METHODUS2025/034355H01L 23/367MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202552WO/2025/264926METHODS OF DETERMINING A BONDING STATUS BETWEEN A PORTION OF WIRE AND A WORKPIECE ON A WIRE BONDING SYSTEMUS2025/034377H01L 23/00KULICKE AND SOFFA INDUSTRIES, INC.ELECTRICITYالکتریسیتهدانش هسته ای