| سال | هفته | ID | Title | ApplNo | IPC | Applicant | Subgroup | زیر گروه | رشته | شرح | Description |
|---|
2025 | 52 | WO/2025/179756 | POWER MODULE AND MANUFACTURING METHOD THEREFOR | CN2024/106118 | H01L 21/60 | ZINSIGHT TECHNOLOGY (SHANGHAI) CO. LTD | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/260141 | METHOD OF PRODUCING A PATTERNED MATERIAL ON A FILM | AU2025/050663 | H01L 21/44 | NEWSOUTH INNOVATIONS PTY LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/260142 | A METHOD OF PATTERNING MATERIALS | AU2025/050664 | H01L 21/033 | NEWSOUTH INNOVATIONS PTY LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/260208 | SEMICONDUCTOR PACKAGING APPARATUS | CN2024/099557 | H01L 21/67 | WANG, Chungpao | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/260497 | SUBSTRATE CARRYING APPARATUS AND FILM ATTACHING DEVICE | CN2024/113826 | H01L 21/683 | WAFTECH SDN. BHD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/260501 | METHOD FOR IMPROVING ADHESION OF SEED LAYER | CN2024/114256 | H01L 21/48 | ARRAYED MATERIALS (CHINA) CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/260565 | INTERPOSER AND METHOD FOR TESTING SAME, AND SEMICONDUCTOR STRUCTURE | CN2024/125781 | H01L 23/538 | TSINGHUA UNIVERSITY | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/260812 | ELECTRICAL CONNECTION SUBSTRATE, CHIP PACKAGING STRUCTURE, AND ELECTRONIC DEVICE | CN2025/078840 | H01L 23/498 | HUAWEI TECHNOLOGIES CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/260820 | CHIP PACKAGING STRUCTURE AND ELECTRONIC DEVICE | CN2025/079668 | H01L 23/473 | HUAWEI TECHNOLOGIES CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/260853 | OPTICAL-COMMUNICATION MODULE PACKAGING STRUCTURE AND PREPARATION METHOD | CN2025/082134 | H01L 25/16 | HUAWEI TECHNOLOGIES CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/260967 | CHUCK FOR SQUARE SUBSTRATE | CN2025/091149 | H01L 21/687 | ACM RESEARCH (SHANGHAI) , INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261001 | CHUCK FOR SQUARE SUBSTRATE | CN2025/093930 | H01L 21/687 | ACM RESEARCH (SHANGHAI) , INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261004 | WAFER PROCESSING APPARATUS | CN2025/093980 | H01L 21/67 | ACM RESEARCH (SHANGHAI) , INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261022 | EDGE CLEANING DEVICE AND EDGE CLEANING METHOD | CN2025/094838 | H01L 21/67 | ACM RESEARCH (SHANGHAI) , INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261124 | WAFER BAKING DEVICE | CN2025/098032 | H01L 21/67 | CHIPMORE TECHNOLOGY CORPORATION LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261304 | OPTICAL DEVICE, OPTICAL DEVICE PROCESSING METHOD, AND ELECTRONIC DEVICE | CN2025/101223 | H01L 25/16 | VIVO MOBILE COMMUNICATION CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261627 | SEMICONDUCTOR STRUCTURES | EP2025/059016 | H01L 21/02 | IQE PLC | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261641 | SEMICONDUCTOR STRUCTURES | EP2025/061261 | H01L 21/20 | IQE PLC | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261690 | WAFER-TO-WAFER BONDING PROCESS | EP2025/063754 | H01L 21/18 | ASML NETHERLANDS B.V. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261694 | METHOD AND APPARATUS FOR BONDING SUBSTRATES | EP2025/063931 | H01L 21/67 | ASML NETHERLANDS B.V. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261726 | METHOD FOR PRODUCING A COMPOSITE STRUCTURE INCLUDING A STACK OF LAYERS MADE OF SINGLE-CRYSTAL III-V MATERIALS | EP2025/064495 | H01L 21/20 | SOITEC | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261752 | UTILIZING FORMATE SHELLS FOR METAL STRUCTURES ON INTEGRATED CIRCUIT COMPONENTS | EP2025/065024 | H01L 23/00 | INTERNATIONAL BUSINESS MACHINES CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261786 | 3D INSPECTION OF BURIED REGIONS OF INTEREST WITH REDUCED MILLING ARTEFACTS | EP2025/065517 | H01L 21/66 | CARL ZEISS SMT GMBH | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261891 | LED LIGHTING DEVICE WITH PHOSPHOR LAYER MIXTURE | EP2025/066423 | H01L 25/075 | SIGNIFY HOLDING B.V. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/261911 | VIA-CONNECTED TOP SUBSTRATE OF A POWER MODULE | EP2025/066526 | H01L 23/373 | ROBERT BOSCH GMBH | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/262084 | FAN-OUT PANEL-LEVEL PACKAGING WITH DIRECT BONDED COPPER | EP2025/066982 | H01L 23/00 | CAMBRIDGE GAN DEVICES LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/262743 | HETERO-JUNCTION BIPOLAR TRANSISTOR | JP2024/021860 | H01L 29/737 | NTT, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/262744 | NITRIDE SEMICONDUCTOR ELEMENT | JP2024/021861 | H01L 29/778 | NTT, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/262765 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | JP2024/021945 | H01L 23/12 | ASTEMO, LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/262815 | OPTICAL MODULE AND METHOD FOR MANUFACTURING SAME | JP2024/022102 | H01L 31/02 | MITSUBISHI ELECTRIC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/262834 | LASER DICING DEVICE | JP2024/022223 | H01L 21/301 | YAMAHA HATSUDOKI KABUSHIKI KAISHA | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/262897 | HEAT-CONDUCTING SHEET, HEAT-DISSIPATING DEVICE, AND HEAT-CONDUCTING SHEET PRODUCTION METHOD | JP2024/022459 | H01L 23/36 | RESONAC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/262912 | SEMICONDUCTOR DEVICE | JP2024/022519 | H01L 23/04 | MITSUBISHI ELECTRIC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/262939 | SEMICONDUCTOR DEVICE | JP2024/022635 | H01L 29/812 | MITSUBISHI ELECTRIC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/262958 | HETERO-JUNCTION BIPOLAR TRANSISTOR | JP2024/029295 | H01L 29/737 | NTT, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263004 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | JP2025/004398 | H01L 21/3065 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263064 | SEMICONDUCTOR DEVICE | JP2025/013304 | H01L 25/07 | HITACHI ASTEMO, LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263068 | MANUFACTURING METHOD FOR THREE-DIMENSIONAL MOLDED ARTICLE | JP2025/013439 | H01L 21/60 | FUJIKURA LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263110 | ELECTRONIC CIRCUIT AND MANUFACTURING METHOD OF ELECTRONIC CIRCUIT | JP2025/015611 | H01L 23/36 | ALPS ALPINE CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263112 | ETCHING METHOD AND ETCHING APPARATUS | JP2025/015728 | H01L 21/302 | SCREEN HOLDINGS CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263143 | ABNORMALITY DETECTION METHOD AND ABNORMALITY DETECTION SYSTEM | JP2025/016890 | H01L 21/02 | SCREEN HOLDINGS CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263213 | DEVICE WITH EMBEDDED ELECTRONIC COMPONENTS AND PRODUCTION METHOD THEREFOR | JP2025/018275 | H01L 25/00 | MURATA MANUFACTURING CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263227 | WORK ASSISTANCE METHOD AND WORK ASSISTANCE SYSTEM | JP2025/018709 | H01L 21/02 | SCREEN HOLDINGS CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263250 | SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE | JP2025/019208 | H01L 25/07 | DENSO CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263258 | ETCHING SOLUTION COMPOSITION | JP2025/019349 | H01L 21/308 | RASA INDUSTRIES, LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263317 | ELECTROSTATIC CHUCK | JP2025/020232 | H01L 21/683 | TOTO LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263320 | SEMICONDUCTOR DEVICE | JP2025/020253 | H01L 25/00 | JAPAN DISPLAY INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263324 | TEMPERATURE REGULATING DEVICE AND PLASMA PROCESSING DEVICE | JP2025/020333 | H01L 21/3065 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263329 | CHEMICAL LIQUID SUPPLY DEVICE, CLEANING SYSTEM, AND CONTROL VALVE ADJUSTMENT METHOD | JP2025/020341 | H01L 21/304 | EBARA CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263340 | SUBSTRATE SUPPORT AND SUBSTRATE TREATMENT DEVICE | JP2025/020415 | H01L 21/683 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263345 | METHOD FOR DETERMINING OPTIMUM THICKNESS MEASUREMENT POSITION, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS | JP2025/020525 | H01L 21/304 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263366 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, AND PARAMETER CORRECTION METHOD | JP2025/020734 | H01L 21/306 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263371 | WORK ASSISTANCE METHOD AND WORK ASSISTANCE SYSTEM | JP2025/020779 | H01L 21/02 | SCREEN HOLDINGS CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263387 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE | JP2025/020893 | H01L 25/04 | ROHM CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263408 | SEMICONDUCTOR MODULE AND COMMUNICATION DEVICE | JP2025/021066 | H01L 25/07 | ROHM CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263413 | POLISHING COMPOSITION | JP2025/021120 | H01L 21/304 | FUJIMI INCORPORATED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263414 | POLISHING COMPOSITION | JP2025/021121 | H01L 21/304 | FUJIMI INCORPORATED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263430 | FILM FOR TEMPORARY FIXATION, LAMINATE FOR TEMPORARY FIXATION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | JP2025/021294 | H01L 21/304 | RESONAC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263431 | JOINING DEVICE | JP2025/021298 | H01L 21/02 | TAZMO CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263452 | CHIP STACK DEVICE, SEMICONDUCTOR MODULE, AND MANUFACTURING METHOD THEREFOR | JP2025/021497 | H01L 25/07 | YAMAHA ROBOTICS CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263462 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD | JP2025/021590 | H01L 21/60 | YAMAHA ROBOTICS HOLDINGS CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263473 | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD | JP2025/021647 | H01L 21/304 | SCREEN HOLDINGS CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263551 | DIE BONDING FILM AND METHOD FOR MANUFACTURING SAME, DICING/DIE BONDING INTEGRATED FILM AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME | JP2025/021975 | H01L 21/52 | RESONAC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263587 | GAN SUBSTRATE AND SURFACE PROCESSING METHOD OF GAN SUBSTRATE | JP2025/022205 | H01L 21/304 | SANOH INDUSTRIAL CO.,LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263663 | DISPLAY DEVICE USING MICRO LED AND METHOD FOR MANUFACTURING SAME | KR2024/008763 | H01L 25/075 | UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263688 | HUMIDITY CONTROL EQUIPMENT USING SINGLE FAN FOR PERFORMING DEHUMIDIFICATION AND REGENERATION | KR2024/014985 | H01L 21/67 | YEST CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263782 | ASSEMBLY FOR CONNECTING PARTS | KR2025/005181 | H01L 21/687 | WILL BE S&T CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263795 | DISPLAY MODULE AND ELECTRONIC DEVICE | KR2025/005488 | H01L 25/075 | SAMSUNG ELECTRONICS CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/263976 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME | KR2025/008395 | H01L 25/075 | SAMSUNG DISPLAY CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264039 | DISPLAY DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE | KR2025/008601 | H01L 25/075 | SAMSUNG DISPLAY CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264258 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME | US2024/056514 | H01L 23/482 | MICROCHIP TECHNOLOGY INCORPORATED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264294 | METHOD FOR SELECTIVELY DEPOSITING ETCH STOP LAYER | US2025/022783 | H01L 21/768 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264318 | DUAL-LINER THROUGH-SILICON VIA (TSV) FOR POWER AND SIGNAL TRANSMISSION | US2025/027619 | H01L 21/768 | QUALCOMM INCORPORATED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264357 | LOW FRACTURE ENERGY ACOUSTIC LIFT-OFF | US2025/030501 | H01L 21/02 | CRYSTAL SONIC, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264364 | METHODS AND APPARATUS FOR DETERMINING A PROPERTY OF A SUBSTRATE SURFACE | US2025/030657 | H01L 21/66 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264377 | HETEROGENOUS INTEGRATION OF SEMICONDUCTOR STRUCTURES | US2025/031791 | H01L 23/528 | MICRON TECHNOLOGY, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264387 | ETCHING OF A BOTTLE-SHAPED FEATURE | US2025/032239 | H01L 21/3213 | LAM RESEARCH CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264393 | COOLANT FLOW CONTROL SYSTEM FOR SUBSTRATE SUPPORTS | US2025/032407 | H01L 21/67 | LAM RESEARCH CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264400 | DEVICE COMPRISING WALL PILLAR INTERCONNECTS | US2025/032532 | H01L 23/00 | QUALCOMM INCORPORATED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264427 | SECURITY RING FOR INTEGRATED CIRCUITS | US2025/032953 | H01L 23/00 | XILINX, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264438 | SELECTIVE ETCH OF STACK USING A HYDROGEN CHLORIDE GAS AND FLUORINE CONTAINING GAS | US2025/033056 | H01L 21/311 | LAM RESEARCH CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264447 | CHEMICAL MECHANICAL POLISHER CLEANING UNIT | US2025/033148 | H01L 21/687 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264494 | PACKAGE COMPRISING DUMMY SILICON STRUCTURE LOCATED BETWEEN INTEGRATED DEVICES | US2025/033541 | H01L 23/16 | QUALCOMM INCORPORATED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264542 | ROTATIONAL INDEXERS WITH WAFER CENTERING CAPABILITY | US2025/033752 | H01L 21/68 | LAM RESEARCH CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264543 | SUBSTRATE SUPPORT | US2025/033755 | H01L 21/683 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264557 | SINGLE COMPONENT GAS DIFFUSION COMPONENT WITH VARIATION OF GAS DIFFUSION CHARACTERISTICS | US2025/033777 | H01L 21/67 | POREX CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264567 | LOW-K FILM COEFFICIENT OF THERMAL EXPANSION MODULATION BY UV TREATMENT | US2025/033794 | H01L 21/02 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264571 | HYBRID VACUUM ELECTROSTATIC CHUCK | US2025/033800 | H01L 21/683 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264576 | DIELECTRIC BOND LAYER FOR JOINING OF DISSIMILAR CERAMIC SEGMENTS OF A SUBSTRATE SUPPORT | US2025/033809 | H01L 21/687 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264589 | INTERPOSER FOR SEMICONDUCTOR DEVICES | US2025/033846 | H01L 23/00 | ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264619 | FLUORINE PLASMA RESISTANT DIELECTRIC COMPOSITIONS | US2025/033898 | H01L 21/687 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264708 | BRANCHED HYBRID FLEX STRUCTURES | US2025/034026 | H01L 23/00 | ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264714 | COMPOSITE HYBRID STRUCTURES | US2025/034033 | H01L 25/16 | ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264792 | REACTION CHAMBER WITH MULTI PHASE PRECURSOR DELIVERY | US2025/034149 | H01L 21/67 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264794 | RESIDUE REMOVAL AFTER ETCH PROCESSES USING A BORON-CONTAINING ETCHANT | US2025/034151 | H01L 21/3213 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264821 | METHODS OF REPAIRING LOW-K MATERIALS AFTER INTEGRATION OPERATIONS | US2025/034198 | H01L 21/02 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264911 | SEMICONDUCTOR DEVICE HEAT SPREADER AND METHOD | US2025/034355 | H01L 23/367 | MICRON TECHNOLOGY, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2025 | 52 | WO/2025/264926 | METHODS OF DETERMINING A BONDING STATUS BETWEEN A PORTION OF WIRE AND A WORKPIECE ON A WIRE BONDING SYSTEM | US2025/034377 | H01L 23/00 | KULICKE AND SOFFA INDUSTRIES, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای |